Definition & Meaning | English word MOSFETS

Definitions of MOSFETS

1. plural of MOSFET.

Examples of Using MOSFETS in a Sentence

• NMOS or nMOS logic (from N-type metal–oxide–semiconductor) uses n-type (-) MOSFETs (metal–oxide–semiconductor field-effect transistors) to implement logic gates and other digital circuits.
• Generally this means that high current circuits such as on chip power regulators use metal–oxide–semiconductor field-effect transistors (MOSFETs) for efficient control, and 'sea of logic' use conventional CMOS structures, while those portions of specialized very high performance circuits such as ECL dividers and LNAs use bipolar devices.
• Non-volatile memory typically refers to storage in memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs (metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD).
• From 1974, Yamaha, JVC, Pioneer Corporation, Sony and Toshiba began manufacturing audio amplifiers with power MOSFETs.
• Memory is read through the use of a combination of p-type and n-type metal–oxide–semiconductor field-effect transistors (MOSFETs).
• However, power MOSFETs have parasitic PN and BJT elements within the structure, which can cause more complex localized failure modes resembling secondary breakdown.
• Short-channel effect, a secondary effect describing the reduction in threshold voltage Vth in MOSFETs with non-uniformly doped channel regions as the gate length increases.
• Charge pumps are used in H bridges in high-side drivers for gate-driving high-side n-channel power MOSFETs and IGBTs.
• With the area of the MOSFETs halving every 18-24 months (Moore's law) the distance between the two terminals of the MOSFET switch called the channel length is becoming smaller and smaller.
• Similarly to early PMOS and NMOS CPU designs using enhancement mode MOSFETs as loads, depletion-load nMOS designs typically employed various types of dynamic logic (rather than just static gates) or pass transistors used as dynamic clocked latches.
• Analog Circuits: Equivalent circuits (large and small-signal) of diodes, BJTs, JFETs, and MOSFETs, Simple diode circuits, clipping, clamping, rectifier.
• Electrons confined to the heterojunction of HEMTs exhibit higher mobilities than those in MOSFETs, since the former device utilizes an intentionally undoped channel thereby mitigating the deleterious effect of ionized impurity scattering.
• A solid-state H-bridge is typically constructed using opposite polarity devices, such as PNP bipolar junction transistors (BJT) or P-channel MOSFETs connected to the high voltage bus and NPN BJTs or N-channel MOSFETs connected to the low voltage bus.
• Ngspice implements various circuits elements, like resistors, capacitors, inductors (single or mutual), transmission lines and a growing number of semiconductor devices like diodes, bipolar transistors, MOSFETs (both bulk and SOI), MESFETs, JFETs and HFETs.
• There is also a Component library that includes various standard components available in the market (bridges, diodes, varistors, LEDs, JFETs, MOSFETS, and so on).
• Nexperia's products include 650V silicon carbide Schottky diodes, bipolar transistors as well as 650V GaN FETs, MOSFETs like the NextPower series, or the PMCB60XN, which at launch was the most energy efficient 30V MOSFET on the market.
• These hot carriers that have sufficiently high energies and momenta to allow them to be injected from the semiconductor into the surrounding dielectric films such as the gate and sidewall oxides as well as the buried oxide in the case of silicon on insulator (SOI) MOSFETs.
• MOSFETs offer much higher input impedance and lower voltage drop than bipolar junction transistors (BJTs), and do not require biasing resistors as MOSFET switching is controlled by differences in voltage rather than a current, as with BJTs.
• The voltage-fed system is extremely popular and can be used with either SCRs up to frequencies of 10 kHz, IGBTs to 100 kHz and MOSFETs up to 3 MHz.
• Amplidynes are now obsolete technology, replaced by modern power semiconductor electronic devices such as MOSFETs and IGBTs which can produce output power in the kilowatt range.

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